Sealed package including electronic device and power source

ABSTRACT

Various embodiments of a sealed package and method of forming such package are disclosed. The package can include a housing having an inner surface and an outer surface, and a substrate having a first major surface and a second major surface. The package can also include an electronic device disposed on the first major surface of the substrate, and a power source disposed at least partially within the housing. The substrate can be sealed to the housing such that a non-bonded electrical connection is formed between a device contact of the electronic device and a power source contact of the power source.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/299,941, filed Oct. 21, 2016, which claims priority to U.S.Provisional Patent Application No. 62/250,194, filed Nov. 3, 2015, whichare incorporated herein by reference.

BACKGROUND

Various systems require electrical coupling between electrical devicesdisposed within a sealed enclosure or housing and devices or systemsexternal to the enclosure. Oftentimes, such electrical coupling needs towithstand various environmental factors such that a conductive pathwayor pathways from the external surface of the enclosure to within theenclosure remains stable. For example, implantable medical devices(IMDs), e.g., cardiac pacemakers, defibrillators, neurostimulators anddrug pumps, which include electronic circuitry and one or more powersources, require an enclosure or housing to contain and seal theseelements within a body of a patient. Many of these IMDs include one ormore electrical feedthrough assemblies to provide electrical connectionsbetween the elements contained within the housing and components of theIMD external to the housing, for example, one or more sensors,electrodes, and lead wires mounted on an exterior surface of thehousing, or electrical contacts housed within a connector header, whichis mounted on the housing to provide coupling for one or moreimplantable leads, which typically carry one or more electrodes and/orone or more other types of physiological sensors. A physiologicalsensor, for example a pressure sensor, incorporated within a body of alead may also require a hermetically-sealed housing to containelectronic circuitry of the sensor and an electrical feedthroughassembly to provide electrical connection between one or more leadwires, which extend within the implantable lead body, and the containedcircuitry.

SUMMARY

In general, the present disclosure provides various embodiments of asealed package and a method of forming such package. In one or moreembodiments, the sealed package includes a housing having an innersurface and an outer surface, and a substrate that includes a firstmajor surface and a second major surface. The package can also includean electronic device disposed on the first major surface of thesubstrate, where the device includes a device contact. The package canalso include a power source disposed within the housing, where the powersource includes a power source contact. In one or more embodiments, thesubstrate is hermetically sealed to the housing such that a non-bondedelectrical connection is formed between the device contact and the powersource contact.

In one aspect, the present disclosure provides a hermetically-sealedpackage that includes a housing having an inner surface and an outersurface, and a substrate that includes a first major surface and asecond major surface. The package further includes an electronic devicedisposed on the first major surface of the substrate, where the deviceincludes a device contact, and a power source disposed at leastpartially within the housing, where the power source includes a powersource contact. The substrate is hermetically sealed to the housing suchthat a non-bonded electrical connection is formed between the devicecontact and the power source contact.

In another aspect, the present disclosure provides a method of forming ahermetically-sealed package. The method includes disposing a powersource at least partially within a housing, disposing an electronicdevice on a major surface of a substrate, and hermetically sealing thesubstrate to the housing such that a non-bonded electrical connection isformed between a device contact of the electronic device and a powersource contact of the power source. Hermetically sealing the substrateto the housing includes laser bonding the major surface of the substrateto the housing.

In another aspect, the present disclosure provides a method of forming ahermetically-sealed package that includes forming a recess in a majorsurface of a wafer, disposing a power source within the recess of thewafer, and disposing an electronic device on a major surface of asubstrate. The method further includes hermetically sealing the majorsurface of the device substrate to the wafer such that a non-bondedelectrical connection is formed between a device contact of theelectronic device and a power source contact of the power source, andremoving a portion of the wafer and substrate to form thehermetically-sealed package. In another aspect, the present disclosureprovides a method of forming a hermetically-sealed package, includingdisposing a power source within a cavity of a housing, and disposing anelectronic device on a major surface of a substrate wafer. The methodfurther includes hermetically sealing the major surface of the substratewafer to the housing such that the electronic device is disposed withinthe cavity of the housing and a non-bonded electrical connection isformed between a device contact of the electronic device and a powersource contact of the power source. The method further includes removinga portion of the substrate wafer to form the hermetically-sealedpackage.

In another aspect, the present disclosure provides a method of forming ahermetically-sealed package. The method includes forming an openingthrough a welding ring wafer, disposing an electronic device on a majorsurface of a substrate, and hermetically sealing the major surface ofthe substrate to a first major surface of the welding ring wafer suchthat the electronic device is registered with the opening formed throughthe welding ring wafer. The method further includes hermetically sealinga housing of a power source to a second major surface of the weldingring wafer such that the power source is registered with the openingformed through the welding ring wafer, where a non-bonded electricalconnection is formed between a device contact of the electronic deviceand a power source contact of the power source when the housing of thepower source is hermetically sealed to the second major surface of thewelding ring wafer. The method further includes removing a portion ofthe welding ring wafer and the substrate to form the hermetically-sealedpackage.

These and other aspects of the present disclosure will be apparent fromthe detailed description below. In no event, however, should the abovesummaries be construed as limitations on the claimed subject matter,which subject matter is defined solely by the attached claims, as may beamended during prosecution.

BRIEF DESCRIPTION OF THE DRAWINGS

Throughout the specification, reference is made to the appendeddrawings, where like reference numerals designate like elements, andwherein:

FIG. 1 is a schematic perspective view of one embodiment of a sealedpackage.

FIG. 2 is a schematic exploded view of the sealed package of FIG. 1.

FIG. 3 is a schematic plan view of a first major surface of a substrateof the sealed package of FIG. 1.

FIG. 4 is a schematic plan view of a second major surface of thesubstrate of the sealed package of FIG. 1.

FIG. 5 is a schematic exploded top perspective view of anotherembodiment of a sealed package.

FIG. 6 is a schematic exploded bottom perspective view of the sealedpackage of FIG. 5.

FIG. 7 is a schematic exploded view of another embodiment of a sealedpackage.

FIG. 8 is a flow chart of one embodiment of a method of forming a sealedpackage.

FIG. 9 is a flow chart of another embodiment of a method of forming asealed package.

FIG. 10 is a flow chart of another embodiment of a method of forming asealed package.

FIG. 11 is a flow chart of another embodiment of a method of forming asealed package.

FIG. 12 is a schematic perspective view of one embodiment of a weldingring wafer.

FIG. 13 is a schematic perspective view of one embodiment of a substratewafer.

FIG. 14 is a schematic perspective view of the welding ring wafer ofFIG. 12 having a plurality of power sources disposed thereon.

DETAILED DESCRIPTION

In general, the present disclosure provides various embodiments of asealed package and a method of forming such package. In one or moreembodiments, the sealed package includes a housing having an innersurface and an outer surface, and a substrate that includes a firstmajor surface and a second major surface. The package can also includean electronic device disposed on the first major surface of thesubstrate, where the device includes a device contact. The package canalso include a power source disposed within the housing, where the powersource includes a power source contact. In one or more embodiments, thesubstrate is sealed to the housing such that a non-bonded electricalconnection is formed between the device contact and the power sourcecontact. Further, in one or more embodiments, the substrate can behermetically sealed to the housing using any suitable technique orcombination of techniques.

Any suitable technique or combination of techniques can be utilized toseal the substrate to the housing. For example, the housing can includea flange that is adapted to seal the housing to the substrate. In one ormore embodiments, such flange can be integral with the housing. As usedherein, the term “integral” means that two or more elements aremanufactured together at the same time, that is, made together as onepart and not two or more separately manufactured parts that aresubsequently joined together. In one or more embodiments, the flange canbe integral with the substrate and sealed to the housing using anysuitable technique or combination of techniques. In one or moreembodiments, the flange can be a separate part or component, e.g., awelding ring, that is sealed to the substrate and the housing.

Further, the power source can include a casing or container such thatthe housing of the package is provided by the power source. In one ormore embodiments, the package can include a separate housing withinwhich the power source and power source casing can be disposed. In oneor more embodiments, the power source does not include a casing suchthat active material and components of the power source are disposeddirectly within the housing, and a cover or wall can be disposed overthe power source to seal it within the housing.

The various embodiments of sealed packages described herein can includeor be utilized with any device or system that requires sealed conductivepathways. For example, one or more embodiments of sealed packagesdescribed herein can include an implantable medical device or systemdisposed within the sealed package. In one or more embodiments, thesealed package can be electrically connected to an implantable medicaldevice. Nearly any implantable medical device or system employing leadsmay be used in conjunction with the various embodiments of sealedpackages described herein. Representative examples of implantablemedical devices included in or utilized with the various embodiments ofsealed packages described herein include hearing implants, e.g.,cochlear implants; sensing or monitoring devices; signal generators suchas cardiac pacemakers or defibrillators;

neurostimulators (such as spinal cord stimulators, brain or deep brainstimulators, peripheral nerve stimulators, vagal nerve stimulators,occipital nerve stimulators, subcutaneous stimulators, etc.); gastricstimulators; or the like.

FIGS. 1-4 are various schematic views of one embodiment of a sealedpackage 10. The package 10 includes a housing 20 and a substrate 30. Thehousing 20 includes an inner surface 22 and an outer surface 24.Further, the substrate 30 includes a first major surface 32 and a secondmajor surface 34. The package 10 also includes one or more electronicdevices 40 disposed on the first major surface 32 of the substrate 30.The electronic device 40 can include one or more device contacts 42(FIG. 3). The package 10 also includes a power source 50 that isdisposed at least partially within the housing 20. In one or moreembodiments, the power source 50 can be disposed within a cavity 26 ofthe housing 20. The power source 50 includes one or more power sourcecontacts 52, 54 as is further described herein.

The substrate 30 can be sealed to the housing 20. In one or moreembodiments, the substrate 30 can be hermetically sealed to the housing20. Further, in one or more embodiments, the substrate 30 can be sealedto the housing 20 such that a non-bonded electrical connection can beformed between one or more device contacts 42 and one or more powersource contacts 52, 54.

The housing 20 can include any suitable material or combination ofmaterials, e.g., metallic, polymeric, ceramic, or inorganic materials.In one or more embodiments, the housing 20 can include at least one ofglass, quartz, silica, sapphire, silicon carbide, diamond, MP35N(available from Elgiloy Specialty Metals, Sycamore, Ill.), and galliumnitride. In one or more embodiments, the housing 20 can include at leastone of copper, silver, titanium, niobium, zirconium, tantalum, stainlesssteel, platinum, and iridium. In one or more embodiments, the housing 20can include the same material or combination of materials as thesubstrate 30. Further, in one or more embodiments, the housing 20 caninclude biocompatible materials such that the package 10 can beimplanted within a patient's body. Further, one or more coatings orlayers can be disposed on the outer surface 24 of the housing thatprovide biocompatibility. In one or more embodiments, the housing 20 canbe electrically conductive to provide a ground electrode for the package10 as is known in the art. In one or more embodiments, the housing 20can be nonconductive.

Further, the housing 20 can take any suitable shape or combination ofshapes and can have any suitable dimensions. In one or more embodiments,the housing 20 takes a shape that forms the cavity 26 that canaccommodate the power source 50 (including active material and powersource electronics) and electronic device 40 as is further describedherein.

Sealed to the housing 20 is the substrate 30. In one or moreembodiments, the substrate 30 can be a non-conductive or insulativesubstrate such that the electronic device 40, external electrodes 74,76, and any conductors or other devices disposed on the substrate can beelectrically isolated if desired. The substrate 30 can include anysuitable material or combination of materials. In one or moreembodiments, the substrate 30 can include at least one of glass, quartz,silica, sapphire, silicon carbide, diamond, and gallium nitride, or anycombinations thereof. In one or more embodiments, the substrate 30 caninclude the same material or materials as the housing 20. As with thehousing 20, the substrate 30 can include a biocompatible material.Further, the substrate 30 can include one or more coatings or layersthat can provide biocompatibility.

Further, the substrate 30 can be a transparent substrate. As usedherein, the phrase “transparent substrate” refers to a substrate thatcan transmit a given percentage of light incident thereon during use oflaser bonding techniques described herein to preferentially heat only anouter surface of the substrate (e.g., first major surface 32 or secondmajor surface 34 of substrate 30), and not an inner bulk of thesubstrate, and thereby create a bond that has a relatively greaterstrength than the bulk strength of the substrate. In one or moreembodiments, the substrate 30 can be substantially transparent at adesired wavelength or range of wavelengths. As used herein, the phrase“substantially transparent” means that the substrate transmits greaterthan 50% of light incident on the substrate for a selected wavelength orrange of wavelengths, assuming no reflection at the air-substrateboundaries. In one or more embodiments, the substrate 30 can besubstantially transmissive to light having a wavelength of at least 200nm. In one or more embodiments, the substrate 30 can be substantiallytransmissive to light having a wavelength of greater than 10,000 nm. Inone or more embodiments, the substrate 30 can be substantiallytransmissive to light having a wavelength in a range of 200 nm to 10,000nm. In one or more embodiments, the substrate 30 can be substantiallytransmissive to at least one of UV light, visible light, and IR light.

The substrate 30 can include any suitable dimensions, e.g., thicknesses.Further, the substrate 30 can take any suitable shape or combinations ofshapes. In one or more embodiments, the substrate 30 can take a shape orcombination of shapes that is complementary to a shape of the housing 20such that the substrate can be sealed to the housing and provide alow-profile shape for the sealed package 10. Further, the substrate 30can be a single, unitary substrate or multiple substrates joinedtogether.

Disposed on the first major surface 32 of the substrate 30 is theelectronic device 40. Although depicted as being disposed on the firstmajor surface 32, the electronic device 40 can be disposed on the secondmajor surface 34, or electronic devices can be disposed on both thefirst and second major surfaces. In one or more embodiments, one or moreelectronic devices can be disposed within the housing 20 and notattached to the substrate 30. Any suitable electronic device 40 ordevices can be disposed on the first major surface 32, e.g., capacitors,transistors, integrated circuits, including controllers andmultiplexers, sensors, etc. Further, any suitable number of electronicdevices 40 can be disposed on the first major surface 32. Further, anysuitable technique or combination of techniques can be utilized todispose the electronic device 40 on the first major surface 32. In oneor more embodiments, the electronic device 40 can be formed on the firstmajor surface 32 of the substrate 30. In one or more embodiments, thedevice 40 can be formed separately and then attached to the first majorsurface 32. Any suitable technique or combination of techniques can beutilized to attach the electronic device 40 to the substrate 30, e.g., abond can be formed between the electronic device and the first majorsurface 32 of the substrate.

As mentioned herein, the electronic device 40 can include one or moresensors, e.g., one or more optical sensors. In one or more embodiments,at least a portion of the substrate 30 can be transparent such that anoptical sensor disposed on the first major surface 32 can detect one ormore external signals, e.g., from a patient, when the package 10 isdisposed within the patient. In one or more embodiments, the at least aportion of the substrate 30 can be transparent enough to enabletransmission of all, or a sufficient magnitude, of the light that isincident on the substrate for reception by the optical sensor such thatthe received light can be processed to detect the external signal. Forexample, the electronic device 40 can include an infrared ornear-infrared oxygen sensor that can detect through the substrate 30 theoxygen level of the blood of the patient.

The electronic device 40 can be electrically connected to one or moreadditional electronic devices disposed on one or both of the first majorsurface 32 and second major surface 34, or within the housing 20. Forexample, the electronic device 40 can be electrically connected to thepower source 50 using any suitable technique or combination oftechniques. In one or more embodiments, the electronic device 40 caninclude one or more device contacts 42 that are electrically connectedto the electronic device using any suitable technique or combination oftechniques. For example, FIG. 3 is a schematic plan view of the firstmajor surface 32 of the substrate 30. Device contacts 42 areelectrically connected to device 40 through conductors 44. Althoughillustrated as including two device contacts 42, the package 10 caninclude any suitable number of device contacts. The device contacts 42can include any suitable contacts, pads, terminals, etc., that provideelectrical connection to other devices, e.g., power source 50. Thecontacts 42 can take any suitable shape or combination of shapes and bedisposed in any suitable location on or in the first major surface 32 ofthe substrate 30. Any suitable technique or combination of techniquescan be utilized to form device contacts 42 and conductors 44, e.g.,chemical vapor deposition, plasma vapor deposition, physical vapordeposition, etc., followed by photolithography, chemical etching, etc.Further, the device contacts 42 and conductors 44 can include anysuitable conductive material or combination of conductive materials. Inone or more embodiments, the electronic device 40 can be electricallyconnected to other electronic circuitry or devices disposed on oradjacent the substrate 30 or within the housing 20.

The electronic device 40 can be electrically connected to devicecontacts 42 using any suitable technique or combination of techniques.For example, in one or more embodiments, solder bumps and/or contactpads of the electronic device 40 can be directly attached to one or morecontacts 42 using any suitable technique or combination of techniques,e.g., soldering, welding, laser bonding, mechanically connecting (e.g.,direct-pressure contacts), etc. In one or more embodiments, one or moreconductors 44 can be electrically connected to one or more devicecontacts 42 and one or more solder bumps and/or contact pads of theelectronic device 40 using any suitable technique or combination oftechniques, e.g., soldering, welding, laser bonding, mechanicallyconnecting (e.g., direct-pressure contacts), etc.

Any suitable technique or combination of techniques can be utilized todispose the device contacts 42 and the conductors 44 on the substrate30, e.g., the techniques described in U.S. Patent Application No.62/096,706 (Medtronic Reference No. C00008775.USP1), entitledKINETICALLY LIMITED NANO-SCALE DIFFUSION BOND STRUCTURES AND METHODS.For example, electromagnetic radiation can be directed through substrate30 from the second major surface 34 to a region between the devicecontacts 42, the conductors 44, and the substrate 30. Theelectromagnetic radiation can form a bond that seals the device contacts42 and the conductors 44 to the substrate 30 in any suitable pattern orshape. The bond can be a laser bond.

The package 10 can also include power source 50. Any suitable powersource or combination of power sources can be utilized with package 10,e.g., one or more batteries, capacitors, inductive-coupled energydevices, photovoltaic devices, betavoltaic devices, alphavoltaicdevices, and thermo-electric devices.

The power source 50 can be disposed in any suitable location. In one ormore embodiments, the power source 50 is disposed at least partiallywithin the housing 20. As used herein, the term “at least partiallywithin” means that at least a portion of the power source 50 is disposedwithin the housing 20. In one or more embodiments, the entire powersource 50 can be disposed within the housing 20. As is further describedherein, the power source 50 can include its own housing or casing. Inone or more embodiments, the housing 20 provides at least a portion ofan outer casing for the power source. For example, the inner surface 22of the housing 20 can provide a portion of a casing of the power source50, and a separate cover or protective layer can be disposed within thehousing such that the power source is between the protective layer andthe inner surface of the housing. The power source 50 can be integralwith the housing 20. In one or more embodiments, the power source 50 isa separate element that is separately manufactured and then disposedwithin the housing 20.

The power source 50 includes one or more power source contacts 52, 54.Although depicted as including three contacts 52, 54 the power source 50can include any suitable number of contacts that can be electricallyconnected to one or more devices to provide electrical energy to suchdevices from the power source. The power source contacts 52, 54 can bedisposed in any suitable location relative to the power source 50. Asillustrated in FIG. 2, the power source contacts 52, 54 are disposed ata first end 53 of the power source 50. The power source contacts 52, 54can include any suitable contact, e.g., the same contacts describedregarding device contacts 42. In one or more embodiments, the powersource contacts 52, 54 can include one or more compressible or resilientmembers that can engage one or more device contacts, e.g., devicecontacts 42, when the substrate 30 is sealed to the housing 20. Eachpower source contact 52 can be the same contact or type of contact. Inone or more embodiments, each power source contact 52 can be differentfrom each additional power source contact. For example, as illustratedin FIG. 2, the power source 50 includes an additional power sourcecontact 54 that can be the same as or different from the power sourcecontacts 52.

The electronic device 40 can, in one or more embodiments, beelectrically connected to the power source 50 using any suitabletechnique or combination of techniques. In one or more embodiments, theelectronic device 40 can be electrically connected to the power source50 when the substrate 30 is sealed to the housing 20. Any suitabletechnique or combination of techniques can be utilized to electricallyconnect the electronic device 40 to the power source 50 when thesubstrate 30 is sealed to the housing 20. For example, one or more powersource contacts 52, 54 can be electrically connected to one or moredevice contacts 42 when the substrate 30 is sealed to the housing 20.Any suitable electrical coupling between the power source contacts 52,54 and the device contacts 42 can be utilized. In one or moreembodiments, a non-bonded electrical connection can be formed betweenone or more device contacts 42 and one or more power source contacts 52,54 when the substrate 30 is sealed to the housing 20. As used herein,the term “non-bonded electrical connection” means that an electricalconnection is formed between two or more contacts, terminals,electrodes, etc., that can be maintained by suitable contact pressurebetween the two or more contacts to maintain the electrical connection,without the use of a bonding agent, e.g., a conductive adhesive, solder,etc. In one or more embodiments, this non-bonded electrical connectioncan be formed between one or more device contacts 42 and one or morepower source contacts 52, 54 by mechanical engagement between suchcontacts using any suitable connecting element or elements, e.g., pinand sleeve connecting elements. In one or more embodiments, at least oneof the device contacts 42 and the power source contacts 52, 54 caninclude a compressible or resilient member that mechanically engagesanother contact when the substrate 30 is sealed to the housing 20. Inone or more embodiments, a bonded electrical connection can be providedbetween the one or more power source contacts 52, 54 and the one or moredevice contacts 42 using any suitable technique, e.g., welding, adheringusing a conductive adhesive (e.g., UV or thermally curable adhesives),soldering, laser bonding, etc.

The substrate 30 can be sealed to the housing 20 using any suitabletechnique or combination of techniques, e.g., mechanically fastening,adhering, press fitting, laser bonding, magnetic coupling, etc. In oneor more embodiments, the first major surface 32 of the substrate 30 canbe sealed to an edge surface 29 of a flange 28. The flange 28 can beintegral with the housing 20. In one or more embodiments, the flange 28can be attached to the housing using any suitable technique orcombination of techniques.

In one or more embodiments, the substrate 30 can be hermetically sealedto the housing 20. Any suitable technique or combination of techniquescan be utilized to hermetically seal the substrate 30 to the housing 20.For example, in one or more embodiments, the substrate 30 can behermetically sealed to the housing 20 by a bond. Any suitable techniqueor combination of techniques can be utilized to form such bond, e.g.,the techniques described in co-owned and co-filed U.S. PatentApplication No. 62/096,706 (Medtronic Reference No. C00008775.USP1),entitled KINETICALLY LIMITED NANO-SCALE DIFFUSION BOND STRUCTURES ANDMETHODS. In one or more embodiments, electromagnetic radiation (e.g.,light) can be directed through substrate 30 from the second majorsurface 34 and focused at a region between the substrate and the housing20. Any suitable electromagnetic radiation can be utilized to form thebond. In one or more embodiments, the electromagnetic radiation caninclude laser light that can include any suitable wavelength or range ofwavelengths. In one or more embodiments, the laser light can includelight having a wavelength of at least 200 nm. In one or moreembodiments, the laser light can include a wavelength of no greater than2000 nm. For example, laser light can include UV light, visible light,IR light, and combinations thereof. The UV light can be provided by a UVlaser that has any suitable wavelength or range of wavelengths and anysuitable pulse width. In one or more embodiments, a UV laser can beutilized to provide light having a wavelength in a range of 100-400 nmand a pulse width in a range of 1-100 ns. In one or more embodiments,the materials for the substrate 30 and the housing 20, and the powerlevel and wavelength of the light used may be selected such that thelight may not directly damage, ablate, warp, or cut the substrate andthe housing, and such that the substrate and the housing retain theirbulk properties.

In general, light can be provided by any suitable laser or laser system.For example, the laser may generate light having a relatively narrow setof wavelengths (e.g., a single wavelength). In one or more embodiments,the light emitted by the laser may form a collimated beam that may notbe focused at a particular point. In one or more embodiments, the lightemitted by the laser may be focused at a focal point at a region betweenthe first major surface 32 of the substrate 30 and the housing 20 togenerate a laser bond. Although the laser may provide light that has anarrow range of wavelengths, in one or more embodiments, the laser mayrepresent one or more devices that emit electromagnetic radiation havinga wider range of wavelengths than a single typical laser. A wide varietyof devices may be used to emit electromagnetic radiation having a narrowor wide range of wavelengths. In one or more embodiments, the laser mayinclude one or more laser devices including diode and fiber lasers.Laser sources may also include, e.g., TI sapphire lasers, argon ionlasers, Nd:YAG lasers, XeF lasers, HeNe lasers, Dye lasers, GaAs/AlGaAslasers, Alexandrite lasers, InGaAs lasers, InGaAsP lasers, Nd:glasslasers, Yb:YAG lasers, and Yb fiber lasers. The laser device may alsoinclude one of continuous wave, modulated, or pulsed modes. Accordingly,a wide variety of laser devices may be used in the bonding process. Inone or more embodiments, a power level of the laser may be set toapproximately 1 W, distributed across the approximate focused beamdiameter of 10 μm, with a top hat, Gaussian, or other suitable spatialenergy profile.

As mentioned herein, one or more electronic devices 40 can be disposedon the first major surface 32 of the substrate 30. In one or moreembodiments, one or more additional devices or features can also bedisposed on the second major surface 34 of the substrate 30. Forexample, in the embodiment illustrated in FIGS. 1-4, the first electrode74 and the second electrode 76 are disposed on the second major surface34 of the substrate 30. The first and second electrodes 74, 76 caninclude any suitable electrode or combination of electrodes and can takeany suitable shape and have any suitable dimensions.

One or both of the first and second electrodes 74, 76 can be utilized toelectrically connect the package 10 to any suitable device or devicesthat are external to the package. For example, one or both of the firstand second electrodes 74, 76 can electrically connect the package 10 toa lead of an implantable medical device. In one or more embodiments, oneor both of the first and second electrodes 74, 76 can electricallyconnect the package 10 to one or more additional power sources. Further,in one or more embodiments, one or both of the first and secondelectrodes 74, 76 can be therapeutic electrodes that can be utilized fordelivering and/or receiving one or more electrical signals to or from apatient, either while the package is external or internal to a patient.Any suitable technique or combination of techniques can be utilized toelectrically connect the package 10 to one or more devices through oneor both of the first electrode 74 and second electrode 76, e.g.,soldering, physical contact, welding, etc. The first and secondelectrodes 74, 76 can include any suitable conductive material orcombination of conductive materials, e.g., copper, silver, titanium,niobium, zirconium, tantalum, stainless steel, platinum, iridium, orcombinations thereof. In one or more embodiments, the first and secondelectrodes 74, 76 can include two or more materials, e.g., bi-metals,clad laminates, etc.

Further, the first and second electrodes 74, 76 can take any suitableshape or combination of shapes. In one or more embodiments, the firstand second electrodes 74, 76 can take a circular shape in a planeparallel to the second major surface 34 of the substrate 30. In one ormore embodiments, the first and second electrodes 74, 76 can take arectangular shape in the plane parallel to the second major surface 34.Further, the first and second electrodes 74, 76 can take any suitableshape or combination of shapes in a plane orthogonal to the second majorsurface 34, e.g., square, tapered, domed, etc. In one or moreembodiments, the first and second electrodes 74, 76 can include complexshapes such as grooves or channels formed in the electrode to facilitateattachment of conductors or electronic devices to the contacts.

The first and second electrodes 74, 76 can also include any suitabledimensions. In one or more embodiments, the first and second electrodes74, 76 can have any suitable thickness in a direction normal to thesecond major surface 34 of the substrate 30. In one or more embodiments,this thickness can be at least 10 micrometers. In one or moreembodiments, the thickness can be no greater 200 micrometers. In one ormore embodiments, the first and second electrodes 74, 76 can be ofsufficient size and thickness to enable laser, resistance, or otherwelding and joining techniques to be utilized to electrically coupleconductors and/or electronic devices to the electrode.

The first and second electrodes 74, 76 can be electrically connected toone or more electronic devices disposed on or within the package, e.g.,electronic device 40. Any suitable technique or combination oftechniques can be utilized to electrically connect one or both of thefirst and second electrodes 74, 76 to one or more devices disposed on orwithin the housing. In one or more embodiments, the first electrode 74can be electrically connected to device 40 through via 78 (FIG. 3),which is electrically connected to device 40 through conductor 75. Via78 can be formed between the first major surface 32 and the second majorsurface 34 of the substrate 30, and a conductive material can bedisposed within the via using any suitable technique or combination oftechniques. Similarly, second electrode 76 can be electrically connectedto electronic device 40 through via 79 (FIG. 3), which is electricallyconnected to the device through conductor 77. Once again, via 79 can beformed between the first major surface 32 and the second major surface34 of substrate 30, and conductive material can be disposed within thevia using any suitable technique or combination of techniques.

The package 10 of FIGS. 1-4 can also include a conductor 70 disposed onthe second major surface 34 of the substrate 30 or within the substratebetween the first major surface 32 and the second major surface 34. Theconductor 70 can include any suitable shape or combination of shapes andcan be formed using any suitable conductive material. Although depictedas including one conductor 70, two or more conductors can be formed onthe second major surface 34 of the substrate 30 or within the substrate.Further, the conductor 70 can be patterned to include any suitable shapeor combination of shapes.

In one or more embodiments, the conductor 70 can be formed to provide anantenna, and the package 10 can be wirelessly coupled to a device orsystem through such antenna. Further, in one more embodiments, theconductor 70 can form an inductive coil that can be utilized to provideinductive coupling to one or more external devices, e.g., one or moreinductive power sources.

The conductor 70 can be electrically connected to one or more electronicdevices disposed within the housing of the package 10 using any suitabletechnique or combination of techniques. For example, a via 72 (FIG. 3)can be formed between the first major surface 32 and the second majorsurface 34 of the substrate 30 that is that is electrically connectedto, e.g., electronic device 40 through conductor 73. Conductive materialcan be disposed within via 72 that electrically connects the conductor72 electronic device 40. The conductor 70 can be electrically connectedto the via 72 using any suitable technique or combination of techniques.

In general, the substrate 30 of package 10 can be sealed to housing 20using any suitable technique or combination of techniques. For example,FIGS. 5-6 are schematic exploded views of another embodiment of apackage 100. The package 100 includes a housing 120, a substrate 130having a first major surface 132 and a second major surface 134, one ormore electronic devices 140 disposed on the first major surface 132 ofthe substrate, and a power source 150 disposed at least partially withinthe housing. The electronic device 140 includes a device contact 142.Further, the power source 150 includes a power source contact 152. Allof the design considerations and possibilities regarding the package 10of FIGS. 1-4 apply equally to the package 100 of FIGS. 5-6. Onedifference between package 100 of FIGS. 5-6 and package 10 of FIGS. 1-4is that the substrate 130 is sealed to the housing 120 using a weldingring 180. The welding ring 180 can include any suitable material orcombination materials, e.g., copper, silver, titanium, niobium,zirconium, tantalum, stainless steel, platinum, iridium, or combinationsthereof. In one or more embodiments, the welding ring 180 can includetwo or more materials, e.g., bi-metals, clad laminates, etc. In one ormore embodiments, the welding ring 180 can include any suitablebio-compatible and weldable materials. Further, the welding ring 180 cantake any suitable shape and have any suitable dimensions. The weldingring 180 can be disposed between the first major surface 132 of thesubstrate 130 and the housing 120. In one or more embodiments, thewelding ring 180 can be hermetically sealed to one or both of the firstmajor surface 132 of the substrate 130 and the housing 120. The weldingring 180 can be sealed to one or both of the substrate 130 and thehousing 120 using any suitable technique or combination of techniques,e.g., laser bonding. In one or more embodiments, the welding ring 180 isfirst attached to the second major surface 132 of the substrate 130 andthen attached to the housing 120. In one or more embodiments, thewelding ring 180 is first attached to the housing 120 and then to thefirst major surface 132 of the substrate 130.

In one or more embodiments, the welding ring 180 can include a flange orrecessed portion 182 that is adapted to mate with a flange or recessedportion 122 of housing 120. The recessed portion 182 and the recessedportion 122 can provide additional surface area for sealing the weldingring 180 to the housing 120. Although not shown, the welding ring 180can include a second recessed portion that is adapted to mate with arecessed portion formed in the substrate 130 (also not shown).

In the embodiment illustrated in FIGS. 5-6, power source contacts 152include one or more deflectable tabs 154. The one or more deflectabletabs 154 electrically connect the power source 150 to the electronicdevice 140. In one or more embodiments, a non-bonded electricalconnection can be formed between one or more device contacts 142 and thedeflectable tabs 154 of power source contacts 152 when the substrate 130is sealed to the housing 120.

The housing of the various embodiments of packages described herein canbe provided by the power source casing such that the package includes asingle housing. In one or more embodiments, the housing can be aseparate housing within which a power source including a power sourcecasing can be disposed. For example, FIG. 7 is a schematic exploded viewof another embodiment of a package 200. The package 200 includes ahousing 220 that includes an inner surface 222 and an outer surface 224,a substrate 230 that includes a first major surface 232 and a secondmajor surface 234, and an electronic device 240 disposed on the firstmajor surface 232 of the substrate. The package 200 also includes apower source 250 that can be disposed at least partially within thehousing 220. The electronic device 240 can include one or more devicecontacts (not shown), and the power source 250 can include one or morepower source contacts 252, 254. The power source 250 includes a casing251 that encloses one or more components of the source, e.g., activematerial such as a liquid or solid electrolyte and power sourceelectronics. All of the design considerations and possibilitiesregarding the package 10 of FIGS. 1-4 and the package 100 of FIGS. 5-6apply equally to the package 200 of FIG. 7.

One difference between the package 200 and package 10 is that the powersource 250 includes a retaining member 256 that is adapted to be incontact with the inner surface 222 of the housing 220 when the powersource 250 is disposed at least partially within the housing in cavity226. In one or more embodiments, the retaining member 256 can provide afriction-fit between the power source 250 and the interior surface 222of the housing 220. In one or more embodiments, the retaining member 256can stabilize the power source 250 relative to the inner surface 222 ofthe housing 220. In one or more embodiments, the retaining member 256can be electrically connected to the power source 250 and provide anelectrical connection to the housing 220, e.g., the retaining member canprovide ground from the power source to the housing.

The retaining member 256 can take any suitable shape or combination ofshapes. Further, the retaining member 256 can include any suitablematerial or combination materials. In one or more embodiments, theretaining member 256 can include a resilient or compressible materialthat engages the inner surface 222 of the housing 220 when the powersource 250 is disposed at least partially within the housing. Forexample, in one or more embodiments, the retaining member 256 caninclude a spring plate attached to or disposed on the casing 251 (orintegral with the casing) of the power source 250 that is deflected whenthe power source is disposed at least partially within the housing 220.In such embodiments, the spring plate 256 provides a friction-fit withthe inner surface 222 of the housing 220 and stabilizes the power source250 relative to the housing.

Another difference between the package 200 and package 10 is that thepower source 250 includes power source contacts 252 at both a first end258 and a second end 259 of the power source. The power source contacts252 can be disposed in any suitable location relative to the powersource 250. Further, in the illustrated embodiment, the power source 250includes an additional contact 254. The additional contact 254 can bedisposed in any suitable location on or within the power source 250.Although depicted as including five power source contacts 252, 254, thepower source 250 can include any suitable number of power sourcecontacts that are adapted to electrically connect the power source toone or more electronic devices 240 or other components disposed withinthe housing 220 or external to the housing. In one or more embodiments,a non-bonded electrical connection can be formed between one or moredevice contacts (not shown) of the electronic device 240 and one or moreof the power source contacts 252, 254 when the substrate 230 is sealedto the housing 220.

The various sealed packages of the present disclosure can be formedusing any suitable technique or combination of techniques. For example,FIG. 8 is a flowchart of one method 300 for forming a sealed package.Although method 300 can be utilized to form any sealed package, themethod will be described in reference to package 10 of FIGS. 1-4. Themethod 300 includes disposing the power source 50 within the housing 20at 302 using any suitable technique or combination of techniques. One ormore electronic devices 40 can be disposed on the substrate 30, e.g., onthe first major surface 32 of the substrate 30, at 304, using anysuitable technique or combination of techniques. For example, theelectronic device 40 can be formed separately from the substrate 30 andthen attached to the substrate, e.g., by soldering or welding the deviceto the substrate. The substrate 30 can be sealed to the housing 20 at306 using any suitable technique or combination of techniques, e.g.,either the first or second major surface 32, 34 of the substrate can belaser bonded to the housing 20. In one or more embodiments, thesubstrate 30 can be hermetically sealed to the housing 20. Further, inone or more embodiments, the substrate 30 can be sealed to the housing20 such that a non-bonded electrical connection can be formed betweenone or more of the device contacts 42 and one or more of the powersource contacts 52, 54. In one or more embodiments, one or moreadditional devices or elements (e.g., conductor 70, electrodes 74, 76)can be disposed on the second major surface 34 of the substrate 30either before or after the substrate is sealed to the housing 20 usingany suitable technique or combination of techniques.

Further, for example, FIG. 9 is a flow chart of another embodiment of amethod 400 for forming a sealed package, e.g., package 200 of FIG. 7. Ahousing wafer can be provided, and one or more recesses can be formed inthe wafer at 402. The housing wafer can include any suitable material orcombination of materials, e.g., the same materials described regardinghousing 220 of FIG. 7. One or more power sources 250 can each bedisposed within one or more of the recesses formed in the wafer at 404using any suitable technique or techniques. In one or more embodiments,the power source 250 can be formed separately and then disposed withinthe recess. In one or more embodiments, the power source 250 can beformed within the recess using any suitable technique.

Further, at 406, one or more electronic devices 240 can be disposed on amajor surface of the substrate 230, e.g., on the first major surface 232of the substrate. In one or more embodiments, a plurality of devices canbe disposed on a substrate wafer that are registered or aligned with thepower sources 250 and the recesses. At 408, the major surface of thesubstrate 230 can be sealed to the wafer using any suitable technique orcombination of techniques, e.g., the substrate can be sealed to thewafer using laser bonding. In one or more embodiments, a non-bondedelectrical connection can be formed between the one or more of thedevice contacts 242 and one or more of the power source contacts 252 ofthe power source 250 when the substrate 230 is sealed to the wafer. At410, a portion of the wafer and the substrate 230 can be removed to formthe sealed package or packages, e.g., a plurality of sealed packages 210can be singulated from the housing wafer and substrate. Any suitabletechnique or techniques can be utilized to remove portions of the waferand substrate, e.g., laser cutting, mechanical cutting, etching, etc.

FIG. 10 is a schematic flow chart of another embodiment of a method 500of forming a sealed package, e.g., sealed package 10 of FIGS. 1-4. At502, power source 50 can be disposed within the cavity 26 of housing 20using any suitable technique or combination of techniques. For example,in one or more embodiments, active material of the power source 50 canbe sealed within a chamber formed in housing 20. One or more electronicdevices 40 can be disposed on a major surface of a substrate wafer at504. At 506, the major surface of the substrate wafer can be sealed tothe housing 50 using any technique or combination of techniques, e.g.,laser bonding the wafer to the housing. In one or more embodiments, themajor surface of the substrate wafer can be hermetically sealed to thehousing 50. Further, in one or more embodiments, a non-bonded electricalconnection can be formed between one or more device contacts 42 of theelectronic devices 40 and one or more power source contacts 52, 54 ofthe power source 50. At 508, one or more portions of the substrate wafercan be removed to form one or more packages, e.g., the one or morepackages can be singulated from the substrate wafer using any suitabletechnique or combination of techniques.

FIG. 11 is a schematic flow chart of another embodiment of a method 600for forming a sealed package, e.g., sealed package 10 of FIGS. 5-6. Themethod 600 includes forming an opening through a welding ring wafer at602. Any suitable welding ring wafer can be utilized. For example, FIG.12 is a schematic perspective view of a welding ring wafer 702. Anysuitable material or combination materials can be utilized to form thewelding ring wafer 702, e.g., the same materials described regardingwelding ring 180 of package 100 of FIGS. 5-6. The welding ring wafer 702includes a plurality of openings 704 formed through the wafer.

At 604, the method 600 further includes disposing one or more electronicdevices 140 on a major surface 708 of a substrate wafer 706 asillustrated in FIG. 13. The substrate wafer 706 can include any suitablematerial or combination of materials, e.g., the same materials describedregarding the substrate 30 of FIGS. 1-4. The electronic devices 140 canbe disposed on any suitable major surface of the substrate wafer 706. At606, the substrate wafer 706 can be sealed to the welding ring wafer 702using any suitable technique or combination of techniques, e.g., laserbonding the substrate wafer to the welding ring wafer. Further, in oneor more embodiments, the major surface 708 of the device substrate wafer706 can be hermetically sealed to a first major surface 703 of thewelding ring wafer 702. In one or more embodiments, the substrate wafer706 can be sealed to the welding ring wafer 702 such that one or moreelectronic devices are registered within one or more openings 704 formedthrough the welding ring wafer 702. In one or more embodiments, aplurality of electronic devices can be disposed on the substrate wafer706 such that one or more electronic devices 140 are registered with oneor more openings of the plurality of openings 704. Any suitable numberof electronic devices 140 can be disposed within each opening of theplurality of openings 704.

At 608, one or more power sources 150 can be sealed to a second majorsurface 705 of the welding ring wafer 702 as shown in FIG. 14 using anysuitable technique or combination of techniques, e.g., laser bonding theone or more power sources to the second major surface of the weldingring wafer. In one or more embodiments, each power source 150 sealed tothe welding ring wafer 702 can be registered with an opening of theplurality of opening 704 in the welding ring wafer 702. In one or moreembodiments, one or more power sources 150 are hermetically sealed tothe second major surface 705 of the welding ring wafer 702. Further, inone or more embodiments, a non-bonded electrical connection can beformed between one or more device contacts 142 of one or more electronicdevices 140 and one or more power source contacts 152 of one or morepower sources 150 when the major surface 703 of the device substrate 130is sealed to the welding ring wafer 702.

At 610, one or more portions of the welding ring wafer 702 and substratewafer 706 can be removed to form one or more sealed packages 100. Anysuitable technique or combination of techniques can be utilized toremove one or more portions of the welding ring wafer 702 and thesubstrate wafer 706. In one or more embodiments, a portion or portionsof the substrate wafer 706 can be removed prior to removal of portionsof the welding ring wafer 702. One or more edges of the remainingportions of the substrate wafer 706 that form the substrate 130 for eachpackage 100 can be rounded or smoothed. A portion or portions of thewelding ring wafer 702 can be removed to singulate one or more packages100 from the welding ring wafer using any suitable technique orcombination of techniques. In one or more embodiments, one or moreportions of the welding ring wafer 702 and substrate wafer 706 can beremoved to form individual substrates that include one or more devicesand a welding ring wafer prior to sealing a power source 150 to thewelding ring of the individual substrate. In other words, the weldingring wafer 702 and substrate wafer 706 can be singulated prior tosealing one or more power sources 150 to singulated portions of thewelding ring wafer and substrate wafer.

All headings provided herein are for the convenience of the reader andshould not be used to limit the meaning of any text that follows theheading, unless so specified.

The terms “comprises” and variations thereof do not have a limitingmeaning where these terms appear in the description and claims. Suchterms will be understood to imply the inclusion of a stated step orelement or group of steps or elements but not the exclusion of any otherstep or element or group of steps or elements.

In this application, terms such as “a,” “an,” and “the” are not intendedto refer to only a singular entity, but include the general class ofwhich a specific example may be used for illustration. The terms “a,”“an,” and “the” are used interchangeably with the term “at least one.”The phrases “at least one of” and “comprises at least one of” followedby a list refers to any one of the items in the list and any combinationof two or more items in the list.

The phrases “at least one of” and “comprises at least one of” followedby a list refers to any one of the items in the list and any combinationof two or more items in the list.

As used herein, the term “or” is generally employed in its usual senseincluding “and/or” unless the content clearly dictates otherwise.

As used herein in connection with a measured quantity, the term “about”refers to that variation in the measured quantity as would be expectedby the skilled artisan making the measurement and exercising a level ofcare commensurate with the objective of the measurement and theprecision of the measuring equipment used. Herein, “up to” a number(e.g., up to 50) includes the number (e.g., 50).

Also herein, the recitations of numerical ranges by endpoints includeall numbers subsumed within that range as well as the endpoints (e.g., 1to 5 includes 1, 1.5, 2, 2.75, 3, 3.80, 4, 5, etc.).

All references and publications cited herein are expressly incorporatedherein by reference in their entirety into this disclosure, except tothe extent they may directly contradict this disclosure. Illustrativeembodiments of this disclosure are discussed and reference has been madeto possible variations within the scope of this disclosure. These andother variations and modifications in the disclosure will be apparent tothose skilled in the art without departing from the scope of thedisclosure, and it should be understood that this disclosure is notlimited to the illustrative embodiments set forth herein. Accordingly,the disclosure is to be limited only by the claims provided below.

1-16. (canceled)
 17. A method of forming a hermetically-sealed package,comprising: disposing a power source at least partially within ahousing; disposing an electronic device on a major surface of asubstrate; hermetically sealing the substrate to the housing such that anon-bonded electrical connection is formed between a device contact ofthe electronic device and a power source contact of the power source,wherein hermetically sealing the substrate to the housing compriseslaser bonding the major surface of the substrate to the housing.
 18. Amethod of forming a hermetically-sealed package, comprising: forming arecess in a major surface of a wafer; disposing a power source withinthe recess of the wafer; disposing an electronic device on a majorsurface of a substrate; hermetically sealing the major surface of thedevice substrate to the wafer such that a non-bonded electricalconnection is formed between a device contact of the electronic deviceand a power source contact of the power source; and removing a portionof the wafer and substrate to form the hermetically-sealed package. 19.A method of forming a hermetically-sealed package, comprising: disposinga power source within a cavity of a housing; disposing an electronicdevice on a major surface of a substrate wafer; hermetically sealing themajor surface of the substrate wafer to the housing such that theelectronic device is disposed within the cavity of the housing and anon-bonded electrical connection is formed between a device contact ofthe electronic device and a power source contact of the power source;and removing a portion of the substrate wafer to form thehermetically-sealed package.
 20. A method of forming ahermetically-sealed package, comprising: forming an opening through awelding ring wafer; disposing an electronic device on a major surface ofa substrate; hermetically sealing the major surface of the substrate toa first major surface of the welding ring wafer such that the electronicdevice is registered with the opening formed through the welding ringwafer; hermetically sealing a housing of a power source to a secondmajor surface of the welding ring wafer such that the power source isregistered with the opening formed through the welding ring wafer,wherein a non-bonded electrical connection is formed between a devicecontact of the electronic device and a power source contact of the powersource when the housing of the power source is hermetically sealed tothe second major surface of the welding ring wafer; and removing aportion of the welding ring wafer and the substrate to form thehermetically-sealed package.
 21. The method of claim 17, furthercomprising disposing one or more electrodes on a second major surface ofthe substrate.
 22. The method of claim 21, further comprising: forming avia between the major surface and the second major surface of thesubstrate; and electrically connecting the one or more electrodes to theelectronic device through the via.
 23. The method of claim 17, whereinthe housing further comprises a flange surrounding a cavity of thehousing, wherein hermetically sealing the substrate to the housingcomprises hermetically sealing the substrate to the flange of thehousing.
 24. The method of claim 17, wherein the electronic device isdisposed in a cavity of the housing between the substrate and the innersurface of the housing when the substrate is hermetically sealed to thehousing.
 25. The method of claim 17, further comprising: disposing anantenna on a second major surface of the substrate; and electricallyconnecting the electronic device to the antenna.
 26. The method of claim25, wherein electrically connecting the electronic device to the antennacomprises forming a via between the major surface and the second majorsurface of the substrate such that the electronic device is electricallyconnected to the antenna through the via.
 27. The method of claim 18,wherein disposing the power source within the recess of the wafercomprises forming the power source within the recess of the wafer. 28.The method of claim 18, wherein hermetically sealing the major surfaceof the device substrate to the wafer comprises laser bonding the majorsurface of the device substrate to the wafer.
 29. The method of claim18, wherein removing the portion of the wafer and substrate comprises atleast one of laser cutting or mechanical cutting the portion of thewafer and substrate to form the hermetically-sealed package.
 30. Themethod of claim 19, wherein hermetically sealing the major surface ofthe substrate wafer to the housing comprises laser bonding the majorsurface of the substrate wafer to the housing.
 31. The method of claim19, wherein disposing the power source within the cavity of the housingcomprises disposing active material of the power source within a chamberformed in the housing.
 32. The method of claim 19, wherein removing theportion of the substrate wafer comprises singulating the substrate waferto form the hermetically-sealed package.
 33. The method of claim 20,wherein hermetically sealing the major surface of the substrate to thefirst major surface of the welding ring wafer comprises laser bondingthe major surface of the substrate to the first major surface of thewelding ring wafer.
 34. The method of claim 20, further comprisingsmoothing one or more edges of remaining portions of the substrate afterremoving the portion of the welding ring wafer and the substrate to formthe hermetically-sealed package.
 35. The method of claim 20, furthercomprising singulating the welding ring wafer prior to hermeticallysealing the housing to the second major surface of the welding ringwafer.
 36. The method of claim 20, wherein each welding ring of thewelding ring wafer comprises a flange that is adapted to mate with aflange of the housing of the power source.